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CVD Equipment(sic) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Sep 24, 2025～Oct 21, 2025
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CVD Equipment Product List

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Plasma CVD device for three-dimensional object experiments (DLC, amorphous SiC)

Plasma CVD device for three-dimensional object experiments (DLC, amorphous SiC)

The compatible film types are DLC, amorphous SiC, etc.! Equipped with a substrate heating mechanism (maximum set temperature: 500°C).

We would like to introduce our "Plasma CVD System for 3D Objects" that we handle. This system can deposit films on three-dimensional objects, and compatible film types include DLC and amorphous SiC, among others. It operates via PC control (sequencer control), allowing for fully automated operation and data logging. We design and manufacture equipment tailored to our customers' needs and budgets, from experimental devices to production systems. Please feel free to contact us for inquiries. 【Features】 ■ Experimental plasma CVD system capable of depositing films on three-dimensional objects ■ Compatible film types: DLC, amorphous SiC, etc. ■ Equipped with a substrate heating mechanism (maximum set temperature: 500°C) ■ Fully automated operation and data logging via PC control (sequencer control) *For more details, please refer to the PDF document or feel free to contact us.

  • Plasma Generator
  • CVD Equipment

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[Manufacturing Results] Plasma CVD Equipment for 3D Object Experimentation

[Manufacturing Results] Plasma CVD Equipment for 3D Object Experimentation

Introduced in the surface treatment process! The material of the vacuum chamber is made of stainless steel, with examples of products achieving a vacuum level of less than 1 Pa.

We would like to introduce our achievements in manufacturing a "Plasma CVD system for three-dimensional objects" for the automotive and motorcycle parts manufacturing industry. We have introduced a product equipped with a substrate heating mechanism that allows for the deposition of DLC, amorphous SiC, and other materials on three-dimensional objects (maximum set temperature: 500°C). Additionally, it features PC operation (sequencer control) for fully automated data logging. Please feel free to contact us when you need assistance. 【Overview of Achievements】 ■ Experimental plasma CVD system capable of film deposition on three-dimensional objects ■ Compatible film types: DLC, amorphous SiC, etc. ■ Equipped with a substrate heating mechanism (maximum set temperature: 500°C) ■ Fully automated and data logging via PC operation (sequencer control) *For more details, please refer to the related links or feel free to contact us.

  • Vacuum Equipment

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Silicon oxide film deposition CVD equipment

Silicon oxide film deposition CVD equipment

Compatible with 3-inch wafers! It features a compact design that achieves space-saving.

This product is a CVD device for depositing silicon oxide. It features a compact design that achieves space-saving. The internal surface treatment is electropolishing, and the chamber material is SUS316. Additionally, it is compatible with 3-inch wafers. 【Features】 ■ Deposits silicon oxide ■ Compact design that achieves space-saving ■ Compatible with 3-inch wafers *For more details, please refer to the external link page or feel free to contact us.

  • CVD Equipment

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[Nanofurnace] BWS-NANO Thermal CVD Device

[Nanofurnace] BWS-NANO Thermal CVD Device

Hot Wall Type Thermal CVD Equipment: A compact, high-performance CVD device ideal for fundamental research.

◉ Graphene, carbon nanotubes ◉ ZnO nanowires ◉ Insulating films such as SiO2 Others, compatible with a wide range of applications as a hot-wall thermal CVD system.

  • CVD Equipment
  • Annealing furnace
  • Heating device

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Plasma CVD equipment

Plasma CVD equipment

It is a device with numerous achievements in mass production of power devices, LEDs, MEMS, etc.

The range of membrane quality control is very broad, allowing us to meet the various membrane quality requirements of our customers. Additionally, we have achieved stable automatic transport for compound wafers and special wafers, which had issues with conventional equipment, contributing to improved yield. In our company, we actively customize each device to reflect our customers' requests as much as possible. We have a demonstration machine permanently installed in-house, so please feel free to consult with us.

  • CVD Equipment

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Mass production continuous atmospheric pressure CVD equipment 'A6300S'

Mass production continuous atmospheric pressure CVD equipment 'A6300S'

Adopting SiC trays! A system that enables mass production while keeping costs down.

The "A6300S" is a continuous atmospheric CVD system for mass production that supports small-diameter wafers with a throughput of 120 wafers per hour. Equipped with an automatic tray exchange system and a head lifting mechanism, it reduces maintenance time and extends production time, while also considering the mass production needs of customers and the safety of operators. 【Features】 ■ High productivity: Capable of processing 120 wafers per hour ■ Heavy metal contamination countermeasures: Prevents metal contamination from the backside of the wafer ■ High performance: Adopts the A63 type head to achieve good film thickness distribution ■ Improved maintainability: Allows for safe maintenance in a short time ■ Footprint: Successfully minimized the number of trays to reduce the equipment area ■ Safety: Ensures high safety through interlocks and optimization of equipment mechanisms *For more details, please refer to the PDF document or feel free to contact us.

  • CVD Equipment

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Atmospheric Pressure CVD Equipment "AMAX800V"

Atmospheric Pressure CVD Equipment "AMAX800V"

Excellent uniformity of film thickness and impurity concentration. Atmospheric pressure CVD equipment that achieves high productivity and low cost.

The atmospheric pressure CVD device "AMAX800V" is a continuous atmospheric pressure CVD system compatible with φ200mm wafers, utilizing the reaction characteristics of monosilane gas to form insulating films such as USG, PSG, BPSG, and back surface protective films on silicon substrates. It achieves high throughput through improvements in the transport mechanism. The adoption of SiC trays minimizes heavy metal contamination, and stable process performance is achieved with less thermal aging. 【Features】 ○ High throughput ○ Excellent film formation characteristics ○ Maintenance-friendly ○ Reduced metal contamination (optional) For more details, please contact us or download the catalog.

  • CVD Equipment

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ICPECVD『SI 500 D』

ICPECVD『SI 500 D』

Control of ion density by ICP power! Achieving low-temperature film formation, low damage, and high conformality.

The "SI 500 D" is an ICPECVD that controls ion density using ICP power. With a high plasma density of 10^12 [ions/cm3] achieved by the unique PTSA200ICP source, it enables low-temperature film deposition, low damage, and high conformality. Please feel free to consult us when you need assistance. 【Features】 ■ Control of ion density using ICP power ■ Control of ion energy with optional bias power ■ Optimization of the process through reactor pressure, separated gas supply lines, and adjustment of the spacing between the ICP source and substrate electrode *For more details, please refer to the PDF materials or feel free to contact us.

  • CVD Equipment

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The ideal small plasma CVD device for research and prototyping: 'VC-R400G'

The ideal small plasma CVD device for research and prototyping: 'VC-R400G'

Adopting a unique LIA method plasma source, we achieve ultra-fast, high-quality vacuum deposition on flat substrates such as glass and metal!

The "VC-R400G" is a plasma CVD device that employs a unique LIA (Low Inductance Antenna) plasma source, achieving ultra-fast and high-quality vacuum deposition on flat substrates such as glass and metal. It is suitable for experiments, research, evaluation, and prototyping. By using the LIA-type inductively coupled plasma (LIA-ICP), it realizes fast, high-precision, and low-damage vacuum deposition. With multi-point control, it ensures finer uniformity. It offers a variety of manual and automatic options. 【Features】 ■ Suitable for experiments, research, evaluation, and prototyping ■ Achieves fast, high-precision, and low-damage vacuum deposition ■ Ensures finer uniformity through multi-point control of LIA ■ Realizes ultra-fast deposition more than five times compared to conventional methods ■ A wide range of options available *For more details, please refer to the related links or feel free to contact us.

  • CVD Equipment

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Plasma CVD device "PEGASUS"

Plasma CVD device "PEGASUS"

Low-temperature film formation. High insulation, high barrier, uniformity!

"PEGASUS" is a mass production-compatible plasma CVD device that enables the formation process of insulating films and protective films for memory, power devices, and MEMS with precise and stable film deposition at low temperatures. It features a high level of safety due to its interlock mechanism and prevents contamination from the backside by using non-metal materials at the wafer contact points. 【Features】 ■ Low-temperature film deposition ■ Maintenance-friendly ■ Wafer handling ■ Footprint ■ Maintenance support, etc. *For more details, please download the PDF or feel free to contact us.

  • Plasma surface treatment equipment

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The ideal small plasma CVD device for research and prototyping: 'VC-R400F'

The ideal small plasma CVD device for research and prototyping: 'VC-R400F'

Adopting a unique LIA method plasma source, we achieve ultra-fast, high-quality vacuum deposition on resin films and metal foils!

The "VC-R400F" is a plasma CVD device that employs a unique LIA (Low Inductance Antenna) method plasma source, enabling ultra-fast and high-quality vacuum film deposition on resin films and metal foils. It is well-suited for experiments, research, evaluation, and prototyping. By using the LIA method of inductively coupled plasma (LIA-ICP), it achieves fast, high-precision, and low-damage vacuum film deposition. With multi-point control, it ensures finer uniformity. It offers a variety of manual, automatic, and optional features. 【Features】 ■ Well-suited for experiments, research, evaluation, and prototyping ■ Achieves fast, high-precision, and low-damage vacuum film deposition ■ Ensures finer uniformity through multi-point control of LIA ■ Realizes ultra-fast film deposition more than five times compared to conventional methods ■ A wide range of options available *For more details, please refer to the related links or feel free to contact us.

  • CVD Equipment

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